APT601R6BN-BUTT datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  APT601R6BN-BUTT
• Производитель
  Microsemi Corporation
• Описание
  Microsemi Corporation APT601R6BN-BUTT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 6.5 A DS Breakdown Voltage-Min: 600 V Drain-source On Resistance-Max: 1.6 ohm Pulsed Drain Current-Max (IDM): 26 A
• Количество страниц
  4 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  165,77 KB

APT601R6BN-BUTT datasheet скачать

APT601R6BN-BUTT datasheet